Research Introduction

This page contains "Summary of Research", "Journal Papers", "Conference Papers"

Summary of Research

Our research focuses on the theoretical and computational modeling of spintronic materials and devices, with an emphasis on ultrafast magnetization dynamics, spin-orbit torque (SOT) switching, and their applications in memory and neuromorphic computing. We have open-sourced all our code on GitHub, e.g., the macrospin model, the atomistic model. We believe this will push us to be more rigorous in research. Others can verify our results and explore further based on our work. Our device models are also verified through our active collaborations with experimental groups.

A central theme of our work is developing rigorous models for ferrimagnets, whose coupled sublattices and temperature-dependent behavior cannot be accurately described by conventional ferromagnetic theories. We advanced this area by building frameworks that range from modified Landau-Lifshitz-Bloch equations to 1D, 2D, and 3D atomistic spin models. These studies revealed the mechanisms of spin-torque-driven switching in ferrimagnets, including the roles of compensation temperatures (PRB 97, 184410 (2018)), spatially nonuniform reversal (Nat. Elec., 3, 37 (2020); PRB 106, 184419 (2022)), domain wall motion (APL 124, 012405 (2024)), and vertical solitons (PRL 135, 126703 (2025)). These works not only explained key experimental observations, but also enabled new concepts for ultrafast memory and terahertz signal generation (Phys. Rev. Appl., 13, 034040 (2020)).

We have also made significant contributions to understanding SOT-driven dynamics in antiferromagnets, including noncollinear kagome systems such as Mn3Sn and collinear or weakly canted systems such as NiO and α-Fe2O3. By constructing detailed atomistic and crystal-sensitive models, we clarified switching mechanisms that had remained controversial, especially the dependence on spin-polarization configuration, crystalline orientation, and torque symmetry. Our results established more suitable switching geometries for antiferromagnetic memory applications (PRB 109, 134433 (2024)), explained robust experimental signals in polycrystalline Mn3Sn (APL 127, 022407 (2025)), and showed how noncollinearity and magnetic nonuniformity can be exploited for deterministic control of antiferromagnetic order (under review).

In ferromagnets, we revisited the physical picture behind SOT switching in nanoscale perpendicular devices. We identified why the widely used analytical model overestimates the switching current and proposed a refined switching mechanism based on smooth magnetization evolution and reversal of precession chirality (PRB, 110 184428 (2024)). This new model achieved much better agreement with experiments and resolved a longstanding discrepancy between theory and measurement.

Beyond spin dynamics, we extended these physical insights into emerging computing technologies. In neuromorphic computing, we proposed and analyzed spintronic neurons with electrically tunable, trainable activation functions, showing that device physics can directly support learning algorithms similar to batch normalization (Chin. Sci. Bull., 70, 1920 (2025)). This approach improved both recognition accuracy and training speed, and was later verified in experiments (ACS Nano, 18, 29469 (2024)). At the circuit level, we developed compact Verilog-A models for the integration of MTJ and transistos (JMMM 611, 172614 (2024), 2025 VLSI TSA) and used them to design spintronic memory and compute-in-memory architectures, including a 4T2MTJ SOT-MRAM cell that combines storage and logic with strong energy and area advantages.

Overall, our research bridges fundamental spin dynamics, predictive multiscale modeling, and practical device and circuit design, helping establish the physical principles needed for next-generation spintronic memory and hardware-efficient artificial intelligence.

Journal Papers

39

Giant modulation of perpendicular magnetic anisotropy of Fe3GaTe2 at room temperature through electric fields

P. Wang#, J. Gou#, Z. Xu#, Y. An#, D. Zhang*, D. Yue, K. Zhai, S. Wu, M. Gao, Z. Zhu*, Y. Li, W. Wang, and Y. Jiang*

Commun. Phys. 8, 445 (2025)

38

Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet

H. Guo, Z. Lin, J. Lu, C. Yun, G. Han, S. Sun, Y. Wu, W. Yang, D. Xiao, Z. Zhu, L. Peng, Y. Ye, Y. Hou, J. Yang, and Z. Luo*

Nat. Commun. 16, 8911 (2025)

37

Vertical Soliton-Assisted Current Switching in Extremely Thick FeGd Ferrimagnets

T. Xu*,#, Z. Xu#, Y. Dong, Y. Cheng, L. Wang, H. Feng, H. Bai, K. Xu, X. Shu, P. Yu, H.-A. Zhou, E. Liu, S. He, C. Xi, G. Yu, X. Qiu, S.K. Kim, J. Zhu, Z. Zhu*, and W. Jiang*

Phys. Rev. Lett. 135, 126703 (2025)

36

Spin-orbit torque-driven chiral domain wall motion in Mn3Sn

Z. Xu, Y. Zhou, X. Zhang, Y. Qiao, Z. Xu, D. Shao*, and Z. Zhu*

Appl. Phys. Lett. 127, 072402 (2025)

[News Coverage]

35

Investigation of sub-configurations reveals stable spin–orbit torque switching polarity in polycrystalline Mn3Sn

B. Zhao, Z. Xu, X. Zhang, Z. Kong, S. Peng*, S. Shi*, and Z. Zhu*

Appl. Phys. Lett. 127, 022407 (2025)

[News Coverage]

34

Angle-resolved magneto-chiral anisotropy in a non-centrosymmetric atomic layer superlattice

L. Cheng#, M. Bao#, X. Zhang#, J. Zhang, Q. Yang, Q. Li, H. Cao, D. Qiu, H. Li, G. Cheng, H. Zhou, J. Zuo, X. Zhou, J. Shen, Z. Zhu*, W. Wang*, and X. Zhai*

Sci. Bull. 70, 1406–1409 (2025)

[News Coverage]

33

Van der Waals spin-orbit torque antiferromagnetic memory

L. Zhang#, Z. Yuan#, J. Yang, J. Zhou, Y. Jiang, H. Li, Y. Cai, E.Y. Tsymbal, Y.P. Feng*, Z. Zhu*, and L. Shen*

Phys. Rev. B. 110, L220409 (2024)

31

Anomalous switching pattern in ferrimagnetic memory cell

Z. Xu, Z. Yuan, X. Zhang, Z. Xu, Y. Qiao, Y. Yang, Z. Zhu*

J. Magn. Magn. Mater. 172614 (2024)

30

Orthogonal spin–orbit torque-induced deterministic switching in NiO

Y. Qiao, Z. Xu, Z. Xu, Y. Yang, Z. Zhu*

Appl. Phys. Lett. 125, 182403 (2024)

[News Coverage]

29

Implementing batch normalization-like algorithm with a single spintronic neuron

Z. Xu#, Y. Xin#, Z. Yuan, K. Zhou, Y. Yang, S. Gao, Z. Zhu*

Chinese Science Bulletin (2024)

[News Coverage]

28

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin–Orbit Torque Devices

P. Huang, X. Liu, Y. Xin, Y. Gu, A. Lee, Y. Zhang, Z. Xu, P. Chen, Y. Zhang, W. Deng, G. Yu, D. Wu, Z. Liu, Q. Yao, Y. Yang, Z. Zhu*, and X. Kou*

ACS Nano 4c03278 (2024)

[News Coverage]

27

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface

H. Chen, W. Tian, L. Zhang, P. Song*, L. Jia, J. Chen, Z. Zhu, Y.P. Feng, K.P. Loh*

Small 2403073 (2024)

26

Non-Hermitian spin dynamics in a coupled ferrimagnetic system

X. Zhang, C. Liu, Z. Zhu*, Y. Zhang*

Phys. Rev. B 109, 184426 (2024)

25

Deterministic spin-orbit torque switching including interplay between spin polarization and kagome plane in Mn3Sn

Z. Xu, X. Zhang, Y. Qiao, G. Liang, S. Shi*, Z. Zhu*

Phys. Rev. B 109, 134433 (2024)

arXiv:2308.08091. (2023)

24

Tunable and inhomogeneous current-induced THz-oscillation dynamics in ferrimagnetic spin-chain

B. Cai, X. Zhang, Z. Zhu, G. Liang*

Commun. Phys. 7, 94 (2024)

23

Spin-transfer-torque induced spatially nonuniform switching in ferrimagnets

X. Zhang, Z. Xu, J. Ren, Y. Qiao, W. Fan*, Z. Zhu*

Appl. Phys. Lett. 124, 012405 (2024)

[News Coverage]

22

Efficient domain wall motion driven by out-of-plane spin polarization

J. Long, Y. Yang, S. Shi, X. Feng, G. Liang, Z. Zhu*

arXiv:2303.08378 (2023)

21

Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

X. Wang, H. Wu, R. Qiu, X. Huang, J. Zhang, J. Long, Y. Yao, Y. Zhao, Z. Zhu, J. Wang, S. Shi*, H. Chang*, W. Zhao*

Cell Rep. Phys. Sci. 101468 (2023)

20

Field-Free Spin–Orbit Torque Switching of an Antiferromagnet with Perpendicular Néel Vector

Z. Xu, J. Ren, Z. Yuan, Y. Xin, X. Zhang, S. Shi, Y. Yang, and Z. Zhu*

J. Appl. Phys. 133, 153904 (2023)

[News Coverage]

19

Anomalous Impact of Thermal Fluctuations on Spin Transfer Torque Induced Ferrimagnetic Switching

Z. Yuan, J. Long, Y. Xin, Z. Xu, L. An, J. Ren, X. Zhang, Y. Yang, and Z. Zhu*

J. Appl. Phys. 133, 153903 (2023)

18

Temperature-insensitive reading of a flash memory cell

W. Zhang, T. Yu, Z. Zhu, and B. Li*

J. Semicond. 44, 044102, (2023)

17

Unconventional computing based on magnetic tunnel junction

B. Cai, Y. He, Y. Xin, Z. Yuan, X. Zhang, Z. Zhu*, and G. Liang*

Appl. Phys. A 129, 236 (2023) Editor's Choice

16

Comparative Study of Temperature Impact in Spin-Torque Switched Perpendicular and Easy-Cone MTJs

J. Long, Q. Hu, Z. Yuan, Y. Zhang, Y. Xin, J. Ren, B. Dong, G. Li, Y. Yang, H. Li*, and Z. Zhu*

Nanomaterials 13, 337 (2023)

15

Magnetic Field-Oriented Electrical Transport Properties in Antiperovskite Mn3SnC

P. Wu*, J. Yan*, P. Liang, Z. Zhu* and T. Wu*

Phys. Status Solidi RRL 2100614, (2022)

14

Electrical Tunable Spintronic Neuron with Trainable Activation Function

Y. Xin, K. Zhou, X. Feng, Y. Yang, S. Gao, Z. Zhu*

arXiv:2211.13391 (2022)

13

Spatially nonuniform oscillations in ferrimagnets based on an atomistic model

X. Zhang, B. Cai, J. Ren, Z. Yuan, Z. Xu, Y. Yang, G. Liang*, and Z. Zhu*

Phys. Rev. B 106, 184419 (2022)

12

Magnetodynamic properties on square patterned of FeGaB and Al2O3/FeGaB thin films

K. Yadagiri*, J. Long, Y. Wang, Z. Zhu, and T. Wu

J Mater Sci: Mater Electron, 15927–15935 (2022)

11

Optimal Spin Polarization for Spin-Orbit-Torque Memory and Oscillator

Z. Fu, A.K. Shukla, Z. Mu, K. Lu, Y. Dong, Z. Luo, X. Qiu, Z. Zhu*, and Y. Yang*

IEEE Transactions on Electron Devices, 1557-1564 (2022)

10

An Overview of Spintronic True Random Number Generator

Z. Fu, Y. Tang, X. Zhao, K. Lu, Y. Dong, A. Shukla, Z. Zhu, and Y. Yang*

Frontiers in Physics 9, 172 (2021)

9

Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine with Weight Sparsity

J. Deng*, V.P.K. Miriyala, Z. Zhu, X. Feng, and G. Liang*

IEEE Electron Devices Lett., 41, 7 (2020)

8

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Z. Zhu*, K. Cai, J. Deng, V.P.K. Miriyala, H. Yang, X. Feng, and G. Liang*

Physical Review Applied 13, 034040 (2020)

7

Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets

K. Cai, Z. Zhu, J.M. Lee, R. Mishra, L. Ren, S.D. Peppard, P. He, G. Liang, K.L. Teo, and H. Yang*

Nature Electronics 3, 37 (2020)

6

All-electric magnetization switching and Dzyaloshinskii-Moriya interaction in WTe2/ferromagnet heterostructures

S. Shi, S. Liang, Z. Zhu, K. Cai, S.D. Peppard, Y. Wang, J. Wang, Q. Wang, P. He, J. Yu, G. Eda, G. Liang, and H. Yang*

Nature Nanotechnology 14, 945 (2019)

5

Voltage-input spintronic oscillator based on competing effects for large output power

Z. Zhu*, J. Deng, X. Feng, and G. Liang*

Journal of Applied Physics 125, 183902 (2019)

4

Spin-wave mediated interactions for Majority Logic Computation using Skyrmions and Spin-torque Nano-oscillators

V.P.K. Miriyala, Z. Zhu, G. Liang, X. Feng

Journal of Magnetism and Magnetic Materials 486, 165271 (2019)

3

Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation

Z. Zhu*, X. Feng, and G. Liang*

Journal of Applied Physics 124, 193901 (2018)

2

Theoretical Proposal for Determining Angular Momentum Compensation in Ferrimagnets

Z. Zhu*, X. Feng, and G. Liang*

Physical Review B 97, 184410, (2018)

Conference Papers

40

Spin-Orbit Torque Induced Spin Dynamics in Noncollinear Antiferromagnet Mn3Sn

(Invited) Z. Zhu*

China-Euro PIFI Seminar on Spintronics and Magnonics, (Wuhan, China, May 11-13, 2026), Oral

39

Characteristics of spin-orbit torque switching in smooth transition region

Z. Kong*, X. Zhang, and Z. Zhu*

IEEE International Magnetics Conference (INTERMAG), (Manchester, U.K., Apr. 13-17, 2026), Oral

38

Spin-orbit torque driven deterministic switching in polycrystalline Mn3Sn

(Invited) Z. Zhu*

Workshop on Magnons, Ferrons, and Superconductors, (Wuhan, China, Apr. 02-03, 2026)

37

Atomistic Study of Spatial Asymmetric Switching in Ferrimagnets

Z. Kong, Z. Xu, X. Zhang, and Z. Zhu*

Future Asia Spintronics and Magnetic Recording Technologies Conference (FAST 2026), (Phuket, Thailand, Feb. 02-06, 2026), Oral

36

A 2-Bit 4T2MTJ MRAM Bit-Cell for Compute-in-Memory Applications

Z. Xu, W. Zhang, J. Wang, X. Zhang, Y. Cen, X. Zhang, X. Fong*, and Z. Zhu*

International VLSI Symposium on Technology, Systems and Applications (2025 VLSI TSA), (Taiwan, China, Dec. 21-24, 2025), Oral

35

A Cache-Compatible 4T2MTJ MRAM Enabling Compute-in-Memory Adders

Z. Xu#, X. Zhang#, D. Chen#, Z. Xue, X. Fong, and Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Yokohama, Japan, Sept. 15-18, 2025), Oral

34

Spin-orbit torque driven deterministic switching in polycrystalline Mn3Sn

Z. Zhu*, B. Zhao*, Z. Xu

Chinese Physical Society Fall Meeting, (Harbin, China, Sep. 11-14, 2025), Oral

33

Study on anomalous switching modes in ferrimagnetic memory cells

Z. Kong*, Z. Xu, Z. Yuan, and Z. Zhu*

Chinese Physical Society Fall Meeting, (Harbin, China, Sep. 11-14, 2025), Poster

32

Spin-orbit torque driven deterministic switching in ferromagnet and noncollinear antiferromagnet

(Invited) Z. Zhu*

International Conference on Materials for Advanced Technologies (ICMAT), (Singapore, Jun. 30-July 04, 2025)

31

Chirality Reversal Related Spin-Orbit Torque Switching in Nanoscale Perpendicular Ferromagnet

X. Zhang, Z. Xu, Z. Zhu*

9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025, (HongKong, China, Mar. 08-Mar. 13, 2025)

30

Spin-orbit torque-driven nanoscale perpendicular ferromagnetic switching

(Invited) X. Zhang, Z. Xu, Z. Zhu*

The 13th National Conference on Magnetic Thin Films and Nanomagnetism, (Xiamen, China, Dec. 12-15, 2024)

29

Deterministic switching of NiO induced by orthogonal spin-orbit torque

Y. Qiao, Z. Xu, Z. Xu, Z. Zhu*

The 13th National Conference on Magnetic Thin Films and Nanomagnetism, (Xiamen, China, Dec. 12-15, 2024), Poster

28

Spin-Orbit Torque Switching of Mn3Sn with Rotated Kagome Plane

B. Zhao#, Z. Xu#, and Z. Zhu*

5th International Workshop on Spintronic Memory and Logic (SML), (Hangzhou, China, Oct. 16-18, 2024), Poster

27

Spin-Orbit Torque Induced Spatial Asymmetric Switching in Ferrimagnets

Z. Kong#, Z. Xu#, X. Zhang#, and Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Himeji, Japan, Sept. 01-04, 2024), Oral

26

Vortex Motion Mediated Back-and-Forth Magnetization Switching in Ferrimagnets

X. Zhang#, Z. Xu, and Z. Zhu*

International Conference on Magnetism (ICM), (Bologna, Italy, June 30-July 05, 2024), Poster

25

Spin-Orbit Torque Switching of Mn3Sn with Spin Polarization Perpendicular to the Kagome Plane

Z. Xu*#, X. Zhang, Y. Qiao, G. Liang, S. Shi*, and Z. Zhu*

IUMRS-ICEM, (Hong Kong, China, May 17-20, 2024), Oral

24

Spin-Orbit Torque Switching of Mn3Sn in Configuration II

Z. Xu*#, X. Zhang#, Y. Qiao, G. Liang, S. Shi*, and Z. Zhu*

IEEE International Magnetics Conference (INTERMAG), (Rio de Janeiro, Brazil, May 05-10, 2024), Oral

23

Spin torque induced nonuniform switching in ferrimagnets

(Invited) Z. Zhu#*

The 6th International Conference on Electronics and Electrical Engineering Technology, (Nanjing, China, Dec. 01-03, 2023)

22

Physics-based compact model for the ferrimagnets

Z. Xu, Z. Yuan, and Z. Zhu*

The 20th National Conference on Magnetism and Magnetic Materials, (Hainan, China, Nov. 08-12, 2023), Oral

21

Vortex Motion Mediated Back-and-Forth Magnetization Switching in Ferrimagnets

X. Zhang#, Z. Xu, and Z. Zhu*

The 68th Annual Conference on Magnetism and Magnetic Materials (MMM 2023), (Dallas, United States, Oct. 30-Nov. 03, 2023), Oral

20

Current Induced Spatially Nonuniform Switching in Ferrimagnets based on the Atomistic Model

X. Zhang#, Z. Xu, J. Ren, Y. Qiao and Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Nagoya, Japan, Sept. 05-08, 2023), Poster

19

Effect of Non-uniform Atom Distribution on Ferrimagnetic Domain Wall Motion Based on an Atomistic Model

J. Ren#, Z. Xu#, X. Zhang, J. Long, Z. Yuan, Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Nagoya, Japan, Sept. 05-08, 2023), Poster

18

Atomistic Modelling of Spatially Resolved Oscillation Dynamics in Ferrimagnetic Spin-Chain

B. Cai*#, X. Zhang, Z. Zhu, G. Liang*

International Conference on Solid State Devices and Materials (SSDM), (Nagoya, Japan, Sept. 05-08, 2023), Oral

17

Spin-Orbit Torque-Induced Field-Free Switching of a Perpendicular Antiferromagnet

Z. Xu#, J. Ren, Z. Yuan, Y. Xin, X. Zhang, and Z. Zhu*

IEEE International Magnetics Conference (INTERMAG), (Sendai, Japan, May 15-19, 2023), Oral

16

Ferrimagnetic MRAM and neuromorphic computing

(Invited) Z. Zhu*#

Semiconductor Technology Forum, (Shanghai, China, Dec. 02-03, 2022)

15

Study of spin torque driven ferrimagnetic dynamics using two-sublattice model

Z. Yuan, Y. Xin, L. An, Z. Xu, X. Zhang, J. Long, J. Ren, and Z. Zhu*

Chinese Physical Society Fall Meeting, (Shenzhen, China, Nov. 17-20, 2022), Poster

14

Atomistic study of spatial dependent ferrimagnetic dynamics

X. Zhang, J. Ren, B. Cai, Z. Yuan, Z. Xu, G. Liang, and Z. Zhu*

Chinese Physical Society Fall Meeting, (Shenzhen, China, Nov. 17-20, 2022), Poster

13

Field-free spin-orbit torque induced switching of perpendicular antiferromagnet

Z. Xu, J. Ren, Z. Yuan, Y. Xin, X. Zhang, S. Shi, Y. Yang, and Z. Zhu*

Chinese Physical Society Fall Meeting, (Shenzhen, China, Nov. 17-20, 2022), Poster

12

Theoretical investigation of Tunable Ferrimagnetic Spin-Chain Oscillation Based on Atomistic Spin Model Simulation

B. Cai#, X. Zhang, Z. Zhu, G. Liang*

The 67th Annual Conference on Magnetism and Magnetic Materials (MMM 2022), (Minneapolis, United States, Oct. 31-Nov. 04, 2022)

11

THz Ferrimagnetic Oscillation Based on the Atomistic Model

X. Zhang*#, B. Cai, R. Jie, Z. Yuan, Y. Yang, G. Liang, Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Chiba, Japan, Sept. 26-29, 2022), Oral

10

Study of Write Error Rate in MRAM with Fixed Voltage Input

L. An*#, Y. Xin, Z. Yuan, Y. Yang and Z. Zhu*

International Conference on Solid State Devices and Materials (SSDM), (Chiba, Japan, Sept. 26-29, 2022), Oral

9

Out-of-plane spin polarization driven domain wall motion

J. Long, Y. Yang, and Z. Zhu*

The 19th National Conference on Magnetism and Magnetic Materials, (Hainan, China, Nov. 03-06, 2021), Poster

8

Spintronic Neuron with Trainable Activation Function

Y. Xin, K. Zhou, Y. Yang, S. Gao, and Z. Zhu*

The 19th National Conference on Magnetism and Magnetic Materials, (Hainan, China, Nov. 03-06, 2021), Poster

7

Ultrafast MRAM and bio-inspired computing devices

(Invited) Z. Zhu*#

Frontier Forum on Spintronic Devices, (Virtual, Oct. 28, 2021)

6

Ferrimagnetic MRAM and neuromorphic computing

(Invited) Z. Zhu*#

The 26th National Conference of Information Storage, (Shanghai, China, Sept. 24-25, 2020)

5

Compact Probabilistic Poisson Neuron based on Back-Hopping Oscillation in STT-MRAM for All-Spin Deep Spiking Neural Network

M. Wu, M. Huang, Z. Zhu, F. Liang, M. Hong, J. Deng, J. Wei, S. Sheu, C. Wu, G. Liang and T. Hou*

IEEE Symposium on VLSI Technology, (Virtual, June 14-19, 2020)

4

Temperature aware study of spin torque switching in ferrimagnetic alloy

Z. Zhu*#, X. Fong, and G. Liang*

2nd SG-SPIN/Tohuku Workshop on Spintronics, (Singapore, Feb. 22, 2019), Poster

3

Ultrafast domain wall propagation in ferrimagnets by spin-orbit torques

K. Cai, R. Mishra, L. Ren, Z. Zhu, G. Liang, K.L. Teo, and H. Yang*

Joint MMM-Intermag Conference, (Washington, DC, 2019)

2

Modeling of Spin Torque Switching in Ferrimagnetic Material Using Landau-Lifshitz-Bloch Equation

Z. Zhu*#, X. Fong, and G. Liang*

Magnetics Symposium, (Singapore, Oct. 05, 2017), Oral

1

Wrangling Spin-Orbit-Torque Voltage-Controlled-Oscillator

Z. Zhu*#, G. Gupta*, H. Lin, and G. Liang

International Conference on Solid State Devices and Materials (SSDM), (Tsukuba, Japan, Sept. 27, 2016), Oral

Theses